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Bulletin I25174 rev. B 04/00
ST223C..C SERIES
INVERTER GRADE THYRISTORS Features
Metal case with ceramic insulator International standard case TO-200AB (A-PUK) All diffused design Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt High surge current capability Low thermal impedance High speed performance
Hockey Puk Version
390A
Typical Applications
Inverters Choppers Induction heating All types of force-commutated converters
case style TO-200AB (A-PUK)
Major Ratings and Characteristics
Parameters
IT(AV) @ Ths IT(RMS) @ Ths ITSM @ 50Hz @ 60Hz It
2
ST223C..C
390 55 745 25 5850 6130 171 156 400 to 800 10 to 30 - 40 to 125
Units
A C A C A A KA2s KA2s V s
C
@ 50Hz @ 60Hz
VDRM /VRRM tq range TJ
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ST223C..C Series
Bulletin I25174 rev. B 04/00
ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code VDRM /VRRM , maximum repetitive peak voltage
V 04 ST223C..C 08 800 900 400
VRSM , maximum non-repetitive peak voltage
V 500
I DRM/I RRM max.
@ TJ = TJ max. mA 40
Current Carrying Capability
Frequency
180oel 50Hz 400Hz 1000Hz 2500Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current di/dt Heatsink temperature Equivalent values for RC circuit 930 910 780 490 50 VDRM 50 40
ITM 180oel 800 770 650 400 50 50 55 1430 1490 1430 1070 50 VDRM 40
ITM 100s 1220 1300 1260 920 50 55 5870 3120 1880 1000 50 V DRM 40
ITM
Units
5240 2740 1640 860 50 55 V A/s C A
47 / 0.22F
47 / 0.22F
47 / 0.22F
On-state Conduction
Parameter
IT(AV) Max. average on-state current @ Heatsink temperature IT(RMS) Max. RMS on-state current ITSM Max. peak, one half cycle, non-repetitive surge current
ST223C..C
390 (150) 55 (85) 745 5850 6130 4920 5150
Units
A C
Conditions
180 conduction, half sine wave double side (single side) cooled DC @ 25C heatsink temperature double side cooled t = 10ms No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max
A
t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms
I 2t
Maximum I2t for fusing
171 156 121 110 KA2s
t = 10ms t = 8.3ms
I 2 t
Maximum I2t for fusing
1710
KA2 s
t = 0.1 to 10ms, no voltage reapplied
2
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ST223C..C Series
Bulletin I25174 rev. B 04/00
On-state Conduction
Parameter
V TM Max. peak on-state voltage
ST223C..C Units
1.58 1.05 1.09 0.88 m 0.82 600 1000 mA V
Conditions
ITM= 600A, TJ = TJ max, tp = 10ms sine wave pulse (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), TJ = TJ max. T J = 25C, I T > 30A T J = 25C, VA = 12V, Ra = 6, I G = 1A
V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage r t1 r Low level value of forward slope resistance
t2
IH IL
High level value of forward slope resistance Maximum holding current Typical latching current
Switching
Parameter
di/dt Max. non-repetitive rate of rise of turned-on current t
d
ST223C..C
1000 0.78 Min 10 Max 30
Units
A/s
Conditions
TJ = TJ max, VDRM = rated VDRM ITM = 2 x di/dt TJ= 25C, VDM = rated VDRM, ITM = 50A DC, tp= 1s Resistive load, Gate pulse: 10V, 5 source TJ = TJ max, ITM = 300A, commutating di/dt = 20A/s VR = 50V, tp = 500s, dv/dt: see table in device code
Typical delay time Max. turn-off time
s
tq
Blocking
Parameter
dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current
ST223C..C
500 40
Units
V/s mA
Conditions
TJ = TJ max. linear to 80% VDRM, higher value available on request T J = TJ max, rated V DRM/V RRM applied
Triggering
Parameter
PGM Maximum peak gate power
ST223C..C
60 10 10 20
Units
W A
Conditions
TJ = TJ max, f = 50Hz, d% = 50 TJ = TJ max, tp 5ms
PG(AV) Maximum average gate power IGM +VGM -V GM IGT VGT IGD VGD Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage Max. DC gate current required to trigger Max. DC gate voltage required to trigger Max. DC gate current not to trigger Max. DC gate voltage not to trigger
V 5 200 3 20 0.25 mA
T J = TJ max, tp 5ms
T J = 25C, V A = 12V, Ra = 6 V mA V T J = TJ max, rated VDRM applied
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ST223C..C Series
Bulletin I25174 rev. B 04/00
Thermal and Mechanical Specification
Parameter
TJ T
stg
ST223C..C
-40 to 125 -40 to 150 0.17 0.08 0.033 0.017 4900 (500)
Units
C
Conditions
Max. operating temperature range Max. storage temperature range
RthJ-hs Max. thermal resistance, junction to heatsink RthC-hs Max. thermal resistance, case to heatsink F Mounting force, 10%
DC operation single side cooled K/W DC operation double side cooled DC operation single side cooled DC operation double side cooled N (Kg) g See Outline Table
K/W
wt
Approximate weight Case style
50
TO - 200AB (A-PUK)
RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Conduction angle
180 120 90 60 30
Sinusoidal conduction Rectangular conduction
Single Side Double Side Single Side Double Side 0.015 0.019 0.024 0.035 0.060 0.017 0.019 0.024 0.035 0.060 0.011 0.019 0.026 0.036 0.060 0.011 0.019 0.026 0.037 0.061
Units
Conditions
K/W
TJ = TJ max.
Ordering Information Table
Device Code
ST
1 1 - Thyristor 2 - Essential part number 3 - 3 = Fast turn off 4 - C = Ceramic Puk
22
2
3
3
C
4
08
5
C
6
H
7
K
8
1
9 10
5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - C = Puk Case TO-200AB (A-PUK) 7 - Reapplied dv/dt code (for tq test condition) dv/dt - tq combinations available
20 CN CM CL CP CK --50 DN DM DL DP DK --100 EN EM EL EP EK --200 FN * FM FL * FP FK --400 --HL HP HK HJ HH
8 - tq code 9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads)
dv/dt (V/s) 10 12 15 t q(s) 18 1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads) 20 2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads) 25 30
3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads) 10 - Critical dv/dt: None = 500V/sec (Standard value) L = 1000V/sec (Special selection)
*Standard part number.
All other types available only on request.
4
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ST223C..C Series
Bulletin I25174 rev. B 04/00
Outline Table
ANODE TO GATE CREEPAGE DISTANCE: 7.62 (0.30) MIN. STRIKE DISTANCE: 7.12 (0.28) MIN. 19 (0.75) DIA. MAX. 0.3 (0.01) MIN.
13.7 / 14.4 (0.54 / 0.57) 0.3 (0.01) MIN. 19 (0.75) DIA. MAX. 38 (1.50) DIA MAX. GATE TERM. FOR 1.47 (0.06) DIA. PIN RECEPTACLE
2 HOLES 3.56 (0.14) x 1.83 (0.07) MIN. DEEP 6.5 (0.26) 4.75 (0.19)
25 5
Case Style TO-200AB (A-PUK)
All dimensions in millimeters (inches) Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification)
42 (1.65) MAX. 28 (1.10)
M a xim u m A llo w a b le H e a tsin k T e m p e ra tu re ( C )
M a xim u m A llo w a b le H e a tsin k T e m p e r at u re (C )
130 120 110 100 90 80 70 60 50 40 30 0 50
13 0 12 0 11 0 10 0 90 80 70 60 50 40 30 20 0 30
ST 2 2 3 C ..C S e rie s (Sin g le S id e C o o le d ) R thJ- hs (D C ) = 0 .1 7 K / W
ST 2 2 3 C ..C S e rie s (Sin g le S id e C o o le d ) R t hJ- hs (D C ) = 0 .1 7 K / W
C o nd uc tio n A ng le
C o ndu ctio n Pe rio d
30
6 0
60 90 1 20 180 DC
90 120 180 2 50 3 00
100
150
20 0
50 1 0 0 1 50 20 0 25 0 3 00 3 5 0 40 0 45 0 A v e ra g e O n -s ta t e C u rre n t (A )
Fig. 2 - Current Ratings Characteristics
A v e ra g e O n -st a t e C u rre n t (A )
Fig. 1 - Current Ratings Characteristics
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ST223C..C Series
Bulletin I25174 rev. B 04/00
M a xim u m A llo w a b le H e a tsin k T e m p er a tu r e ( C ) 1 30 1 20 1 10 1 00 90 80 70 60 50 40 30 20 0 10 0 200 3 00 4 00 5 00 A v e ra g e O n -st a t e C u rre n t (A )
Fig. 3 - Current Ratings Characteristics
C o nduc tion An gle
M a x im u m A llo w a b le H e a t sin k T e m p e rat u re ( C )
S T 2 2 3 C ..C S e rie s (D o u b le S id e C o o le d ) R th J-hs(D C ) = 0 .0 8 K / W
1 30 1 20 1 10 1 00 90 80 70 60 50 40 30 20 0 30 60
ST 2 2 3 C ..C S e rie s (D o ub le Sid e C o o le d ) R thJ- hs (D C ) = 0 .0 8 K/ W
C o ndu ction Pe rio d
30
60
90
120
180
90 120 180 DC 10 0 2 00 3 00 40 0 50 0 60 0 70 0 8 00 A v e ra g e O n -st a te C u rre n t (A )
Fig. 4 - Current Ratings Characteristics
Maxim um Average O n-sta te Power Loss (W )
Maximum Average On -state Power Loss (W )
1000 180 120 90 60 30
1400 1200 1000 800 600 400 200 0 0 100 200 300 400 500 600 700 800 Average O n-state Curren t (A)
Fig. 6 - On-state Power Loss Characteristics
C o nd uc tio n Pe rio d
800
600
RM S Lim it
DC 180 120 90 60 30
RMS Limit
400
C o nduc tio n A ng le
200
ST223C..C Series T J = 125C 0 100 200 300 400 500
ST223C..C Series T J = 125C
0 Average On -state Current (A)
Fig. 5 - On-state Power Loss Characteristics
Peak Half Sine W ave On -state Current ( A)
5000 4500 4000 3500 3000
At Any Rated Load Condition An d W ith Rated V RRM Applied Followin g Surge. Initial TJ = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
P e a k H a lf Sin e W a v e O n -st at e C u rre n t (A )
5500
6000 5500
M a x im u m N o n R e p e t it iv e S urg e C u rre n t V e rsu s P u lse T ra in D ura t io n . C o n t ro l O f C o n d u c t io n M a y N o t Be M a in ta in e d . In it ia l T J = 1 2 5 C 5000 N o V o lta g e R e a p p lie d R a te d V RRM R e a p p lie d 4500 4000 3500 3000 2500 S T2 2 3 C ..C S e r ie s 0.1 P u lse T ra in D u ra tio n (s)
Fig. 8 - Maximum Non-repetitive Surge Current Single and Double Side Cooled
ST223C..C Series 2500 1 10 100
N um b e r O f E qu al A m plitud e Half Cy c le C urre nt Pulse s (N )
2000 0.01
1
Fig. 7 - Maximum Non-repetitive Surge Current Single and Double Side Cooled
6
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ST223C..C Series
Bulletin I25174 rev. B 04/00
Tr a n sie n t Th e rm a l Im p e d a n c e Z thJ-hs (K/ W ) 10000 In st anta neous On-state Current (A) 1 ST 2 2 3 C ..C S e rie s
0 .1
1000 TJ = 25C TJ = 125C
0 .0 1
ST223C..C Series 100 0 2 4 6 8 10 In sta ntaneous O n-state Voltage (V )
Fig. 9 - On-state Voltage Drop Characteristics
S t e a d y S ta t e V a lu e R thJ-h s = 0 .1 7 K/ W (S in g le Sid e C o o le d ) R thJ-hs = 0 .0 8 K/ W (D o u b le S id e C o o le d ) (D C O p e ra tio n ) 0 .0 1 0 .1 1 10
0 .0 0 1 0 .0 0 1
S q ua re W a v e P u lse D u rat io n (s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
M a x im u m R e v e rse R e c o v e ry C h a rg e - Q rr (C )
2 00
S T 2 2 3 C ..C S e rie s T J = 1 2 5 C
I TM = 5 00 A 30 0 A 20 0 A
M a xim u m R e v e rse R e c o v e ry C u rr e n t - Irr (A )
2 50
16 0
IT M = 50 0 A
14 0 12 0 10 0 80 60 40 20 0 0 20
30 0 A 20 0 A 10 0 A 50 A
1 50
1 00 A
1 00
50 A
50
ST 2 2 3 C ..C S e rie s TJ = 1 2 5 C 40 60 80 10 0
0 0 20 40 60 80 1 00 R a t e O f F a ll O f O n -st a t e C u rre n t - d i/ d t (A / s)
Fig. 11 - Reverse Recovered Charge Characteristics
R a t e O f F a ll O f F o rw a rd C u rre n t - d i/ d t (A / s)
Fig. 12 - Reverse Recovery Current Characteristics
1 E4
P e a k O n - st a t e C u rre n t (A )
Snubb er c ircuit R s = 4 7 o hm s C s = 0. 22 F V D = 80 % V D RM 100 0 5 00 4 00 200 1 00 5 0 Hz 1 50 0 2 50 0 3 00 0 ST2 23 C.. C Serie s Sinuso idal pulse TC = 40 C 5 00 0 tp
Snubbe r circ uit R s = 4 7 o hm s C s = 0.22 F V D = 80 % V D RM 400 20 0 1 00 0 50 0 100 50 Hz
1 50 0
1 E3
2 50 0 3 00 0 5 00 0 1 0 00 0
tp
10 00 0
ST2 23 C.. C Se ries Sinuso idal pulse TC = 55 C
1 E2 1E1
1 E2
1 E3
1E 1 E14E 4 1 E 1 1
1E2
1 E3
1E4
P u lse Ba se w id t h ( s)
Fig. 13 - Frequency Characteristics
P u lse Ba se w id t h ( s)
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ST223C..C Series
Bulletin I25174 rev. B 04/00
1E4
Snu bbe r c irc uit R s = 4 7 o hm s C s = 0.22 F V D = 80% V D RM Snubbe r circ uit R s = 4 7 o hm s C s = 0.22 F V D = 8 0 % V D RM 2 50 0 3 00 0 5 00 0 15 0 0 10 00 5 00 400 2 00 10 0 50 Hz 2 50 0 3 00 0 5 00 0 1 00 00 tp ST2 23 C..C Series Trape zoidal pulse T C = 55 C di/dt = 50A /s 1 50 0 10 00 5 00 400 2 00 1 0 0 50 Hz
P e a k O n -sta t e C u rre n t (A )
1E3
1E2
10 0 00 ST22 3C ..C Se rie s Tra pe zoidal pulse TC = 40C di/dt = 5 0A / s
tp
1E1 1 E1
1 E2
1 E3
1 E14E 4 1 E 1 1 1E
1 E2
1E3
1E4
P u lse B ase w idt h ( s)
Fig. 14 - Frequency Characteristics
P u lse Ba se w id t h ( s)
1E4
P e a k O n - sta t e C u rre n t (A )
Snubb er c ircu it R s = 47 o hm s C s = 0 .22 F V D = 80 % V D RM 1 0 00 500 10 0 4 00 20 0 5 0 Hz
Snubbe r circ uit R s = 4 7 o hm s C s = 0.2 2 F V D = 80% V D RM 1 000 5 00 4 00 2 0 0 1 00 50 Hz
1E3
25 0 0 3 00 0 5 00 0 1 50 0
2 50 0 3 000 5 00 0 ST223 C. .C Se ries Tra pezo idal pulse T C = 40 C di/d t = 1 00A /s 10 00 0
1 50 0
1E2
1 00 0 0
tp
tp
ST223 C. .C Se ries Trap ezo id al p ulse T C = 55 C di/dt = 10 0A /s
1E1 1 E1
1 E2
1E 3
1 E14E 4 1 E 1 1 1E
1E 2
1E3
1E4
P u lse B ase w id t h ( s)
Fig. 15 - Frequency Characteristics
P u lse Ba se w id t h ( s)
1E 5
ST22 3C. .C Se ries Re cta ngular pulse di/d t = 5 0A/s 20 jo ule s p er pulse 5 2 1 0.5 0. 3 0. 2 0 .1 tp ST223 C ..C Se ries Sinuso id al p ulse 10
P e ak O n -sta t e C ur re n t (A )
tp
1E 4
2 4 10 2 0 jo ules per pulse
1E 3
0. 2 0.1
0.5 0 .3
1
1E 2
1E 1 1 E1
1E2
1 E3
1 E14E 41 E 1 1 1E
1E 2
1E3
1E4
P u lse B a se w idt h ( s)
P u lse B ase w id t h ( s)
Fig. 16 - Maximum On-state Energy Power Loss Characteristics
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ST223C..C Series
Bulletin I25174 rev. B 04/00
1 00 In st an t a n e o us G a te V o lt a g e ( V ) Re c t a n g ula r g a t e p u lse a ) R e c o m m e n d e d lo a d lin e fo r ra t e d d i/d t : 2 0 V , 1 0 o h m s; t r< =1 s b ) Re c o m m e n d e d lo a d lin e f o r < = 3 0 % ra te d d i/d t : 1 0 V , 1 0 o h m s 10 t r< =1 s (b )
Tj=-40 C Tj=2 5 C Tj=1 25 C
(1) (2) (3) (4) (a )
PGM PGM PGM PGM
= = = =
1 0W , 2 0W , 4 0W , 6 0W ,
tp tp tp tp
= = = =
20 m s 10 m s 5m s 3 .3 m s
1 VGD IG D 0 .1 0 .0 0 1 0 .0 1
(1)
(2)
(3 ) ( 4 )
D e v ic e : ST 2 2 3 C ..C Se rie s Fre q u e n c y L im ite d b y P G (A V ) 0 .1 1 10 1 00
In sta n t a n e o u s G at e C u rr e n t ( A )
Fig. 17 - Gate Characteristics
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